SI2325DS features trenchfet power mosfet ultra low on-resistance small size applications active clamp circuits in dc/dc power supplies product summary v ds (v) r ds(on) ( ) i d (a) q g (typ) 150 1.2 @ v gs = ? 10 v ? 0.69 77 ? 150 1.3 @ v gs = ? 6.0 v ? 0.66 7.7 g s d top view 2 3 to-236 (sot-23) 1 SI2325DS (d5)* *marking code ordering information: SI2325DS -t1?e3 absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol 5 sec steady state unit drain-source voltage v ds ? 150 v gate-source v oltage v gs 20 v continuous drain current (t j = 150 c) a, b t a = 25 c i d ? 0.69 ? 0.53 c on ti nuous d ra i n c urren t (t j = 150 c) a , b t a = 70 c i d ? 0.55 ? 0.43 a pulsed drain current i dm ? 1.6 a continuous source current (diode conduction) a, b i s ? 1.0 ? 0.6 single-pluse a valanche current l = 1 0 mh i as 4.5 single-pulse avalanche energy l = 1.0 mh e as 1.01 mj maximum power dissipation a, b t a = 25 c p d 1.25 0.75 w maximum power dissipation a, b t a = 70 c p d 0.8 0.48 w operating junction and storage temperature range t j , t stg ? 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit mi j ti tabit a t 5 sec r 75 100 maximum junction-to-ambient a steady state r thja 120 166 c/w maximum junction-to-foot (drain) steady state r thjf 40 50 c/w notes a. surface mounted on 1? x 1? fr4 board. b. pulse width limited by maximum junction temperature. product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
specifications (t j = 25 c unless otherwise noted) limits parameter symbol test conditions min typ max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = ? 250 a ? 150 v gate-threshold v oltage v gs(th) v ds = v gs , i d = ? 250 a ? 2.5 ? 4.5 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = ? 150 v, v gs = 0 v ? 1 a zero gate voltage drain current i dss v ds = ? 150 v, v gs = 0 v, t j = 55 c ? 10 a on-state drain current a i d(on) v ds ? 15 v, v gs = 10 v ? 1.6 a drain source on resistance a r ds( ) v gs = ? 10 v, i d = ? 0.5 a 1.0 1.2 drain-source on-resistance a r ds(on) v gs = ? 6.0 v, i d = ? 0.5 a 1.05 1.3 forward t ransconductance a g fs v ds = ? 15 v, i d = ? 0.5 a 2.2 s diode forward voltage v sd i s = ? 1.0 a, v gs = 0 v 0.7 ? 1.2 v dynamic b total gate charge q g v 75 v v 10 v 7.7 12 gate-source charge q gs v ds = ? 75 v, v gs = 10 v i d ? 0.5 a 1.5 nc gate-drain charge q gd i d ? 0 . 5 a 2.5 gate resistance r g f = 1.0 mhz 9 input capacitance c iss 340 510 output capacitance c oss v ds = ? 25 v, v gs = 0, f = 1 mhz 30 pf reverse transfer capacitance c rss ds gs 16 p switching c turn - on time t d(on) 7 11 t urn- o n ti me t r v dd = ? 75 v, r l = 75 i d ? 10 a v gen = ? 10 v 11 17 ns turn off time t d(off) i d ? 1.0 a , v gen = ? 10 v r g = 6 16 25 ns turn-off time t f g 11 17 body diode reverse recovery charge q rr i f = 0.5 a, di/dt = 100 a/ s 90 135 nc notes a. pulse test: pw 300 s duty cycle 2%. b. for design aid only, not subject to production testing. c. switching time is essentially independent of operating temperature. SI2325DS product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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